The 2N6517RLRPG is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 350V and a maximum collector current of 500mA. It has a gain bandwidth product of 200MHz and a maximum power dissipation of 625mW. The transistor is packaged in a TO-92-3 package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C.
PackageTO-92-3
Current Rating500mA
PolarityNPN
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Technical Specifications
Onsemi 2N6517RLRPG technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 1V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Package Quantity | 2000 |
| Packaging | Box |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 350V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N6517RLRPG Datasheet
Download the complete datasheet for Onsemi 2N6517RLRPG to view detailed technical specifications.
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