N-Channel Enhancement Mode Field Effect Transistor offering 60V drain-to-source breakdown voltage and 200mA continuous drain current. Features 5 Ohm drain-to-source resistance and 3V threshold voltage. Packaged in a TO-92 (TO-226) case with 5.33mm body height, this single-element JFET operates from -55°C to 150°C with 350mW maximum power dissipation. RoHS compliant with lead-free construction.
PackageTO-92
Current Rating200mA
PolarityN-CHANNEL
Power350mW
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Technical Specifications
Onsemi 2N7000G technical specifications.
General
Package/Case
TO-92
Contact Plating
Copper, Tin, Silver
Continuous Drain Current (ID)
200mA
Current Rating
200mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
5R
Drain to Source Voltage (Vdss)
60V
Element Configuration
Single
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
60pF
Lead Free
Lead Free
Length
5.2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Nominal Vgs
3V
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
350mW
Radiation Hardening
No
Rds On Max
5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
3V
Turn-Off Delay Time
10ns
Turn-On Delay Time
10ns
DC Rated Voltage
60V
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Onsemi 2N7000G Datasheet
Download the complete datasheet for Onsemi 2N7000G to view detailed technical specifications.
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