N-Channel Enhancement Mode Field Effect Transistor offering 60V drain-to-source breakdown voltage and 200mA continuous drain current. Features 5 Ohm drain-to-source resistance and 3V threshold voltage. Packaged in a TO-92 (TO-226) case with 5.33mm body height, this single-element JFET operates from -55°C to 150°C with 350mW maximum power dissipation. RoHS compliant with lead-free construction.
PackageTO-92
Current Rating200mA
PolarityN-CHANNEL
Power350mW
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Technical Specifications
Onsemi 2N7000G technical specifications.
General
| Package/Case | TO-92 |
| Contact Plating | Copper, Tin, Silver |
| Continuous Drain Current (ID) | 200mA |
| Current Rating | 200mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 60pF |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Rds On Max | 5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 60V |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N7000G Datasheet
Download the complete datasheet for Onsemi 2N7000G to view detailed technical specifications.
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