
NPN Darlington transistor in a TO-226 package, featuring a 100V collector-emitter voltage (VCEO) and a 1.5A maximum collector current. This through-hole component offers a minimum DC current gain (hFE) of 1000 and a transition frequency of 200MHz. It operates within a temperature range of -55°C to 150°C and has a power dissipation of 1W. Packaged in bulk, this lead-free transistor is suitable for various electronic applications.
Onsemi 2N7053 technical specifications.
| Package/Case | TO-226 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1W |
| Series | 2N7053 |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 100V |
| Weight | 0.25g |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi 2N7053 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
