
PNP Bipolar Junction Transistor (BJT) with a maximum collector current of 2A and a collector-emitter voltage of -50V. Features a maximum power dissipation of 900mW and a transition frequency of 100MHz. Housed in a TO-92-3 package, this lead-free component operates from -55°C to 150°C. Compliant with RoHS standards.
Onsemi 2SA1020RLRAG technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | -50V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Height | 7.87mm |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Length | 5.21mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 2A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -50V |
| Width | 4.19mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2SA1020RLRAG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
