PNP Bipolar Junction Transistor (BJT) with a maximum collector current of 3A and a collector-emitter breakdown voltage of 50V. Features a low collector-emitter saturation voltage of 350mV and a transition frequency of 150MHz. Encased in an SC package, this component offers a maximum power dissipation of 1W and operates within a temperature range of -55°C to 150°C. Supplied on a 2500-piece tape and reel, it is RoHS compliant and lead-free.
Onsemi 2SA1707S-AN technical specifications.
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 350mV |
| Collector Emitter Voltage (VCEO) | -700mV |
| Collector-emitter Voltage-Max | 700mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| Height | 4.5mm |
| hFE Min | 140 |
| Lead Free | Lead Free |
| Length | 6.9mm |
| Max Collector Current | 3A |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Width | 2.5mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2SA1707S-AN to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.