PNP Bipolar Junction Transistor (BJT) in a SOT-89 / PCP-1 package, featuring a -50V Collector Base Voltage and a maximum Collector Current of 4A. This single transistor offers a low Collector Emitter Saturation Voltage of -200mV and a minimum hFE of 200. Operating across a temperature range of -55°C to 150°C, it boasts a transition frequency of 400MHz and a maximum power dissipation of 3.5W. The component is RoHS compliant and lead-free, supplied in a 1000-piece tape and reel.
Frequency360MHz
PackageTO-243AA
PolarityPNP
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Technical Specifications
Onsemi 2SA2013-TD-E technical specifications.
General
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -200mV |
| Collector-emitter Voltage-Max | 340mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 360MHz |
| Height | 1.5mm |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Length | 4.5mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 4A |
| Max Frequency | 360MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.5W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 400MHz |
| Width | 2.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2SA2013-TD-E Datasheet
Download the complete datasheet for Onsemi 2SA2013-TD-E to view detailed technical specifications.
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