The 2SA2169-TL-E is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 10A. It features a gain bandwidth product of 130MHz and a transition frequency of 130MHz. The transistor is packaged in a lead-free DPAK package and is RoHS compliant. Operating temperature range is from -55°C to 150°C, with a maximum power dissipation of 950mW.
Frequency130MHz
PackageDPAK
PolarityPNP
Power950mW
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Technical Specifications
Onsemi 2SA2169-TL-E technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -290mV |
| Collector Emitter Voltage (VCEO) | -580mV |
| Collector-emitter Voltage-Max | 580mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 130MHz |
| Gain Bandwidth Product | 130MHz |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 950mW |
| Number of Elements | 1 |
| Package Quantity | 700 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 950mW |
| RoHS Compliant | Yes |
| Transition Frequency | 130MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2SA2169-TL-E Datasheet
Download the complete datasheet for Onsemi 2SA2169-TL-E to view detailed technical specifications.
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