PNP Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 30V collector-emitter voltage, 5A maximum collector current, and 1000mW power dissipation. This single-element silicon transistor is housed in a TO-126 package with 3 pins. Key specifications include a maximum transition frequency of 450MHz and a minimum DC current gain of 200.
PackageTO-126
MountingThrough Hole
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Technical Specifications
Onsemi 2SA2196 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-225-AA |
| Package/Case | TO-126 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 8 |
| Package Width (mm) | 2.7 |
| Package Height (mm) | 11 |
| Seated Plane Height (mm) | 14 |
| Pin Pitch (mm) | 2.4 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 40V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 30V |
| Maximum DC Collector Current | 5A |
| Maximum Power Dissipation | 1000mW |
| Material | Si |
| Minimum DC Current Gain | 200@500mA@2V |
| Maximum Transition Frequency | 450(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi 2SA2196 Datasheet
Download the complete datasheet for Onsemi 2SA2196 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.