PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector current of 2A and a collector-emitter breakdown voltage of 25V. Offers low collector-emitter saturation voltage of -350mV and a maximum power dissipation of 500mW. Operates within a temperature range of -55°C to 150°C. Packaged in a 3-lead SOT-89 (TO-243AA) surface mount package, supplied on a 1000-piece tape and reel.
Frequency150MHz
PackageTO-243AA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Onsemi 2SB1121T-TD-E technical specifications.
General
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | -350mV |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 150MHz |
| Height | 1.5mm |
| Lead Free | Lead Free |
| Length | 4.5mm |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 2A |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Width | 2.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2SB1121T-TD-E Datasheet
Download the complete datasheet for Onsemi 2SB1121T-TD-E to view detailed technical specifications.
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