PNP Bipolar Junction Transistor (BJT) in a TO-243AA (SOT-89) package. Features a collector-emitter breakdown voltage of 50V, a maximum collector current of 2A, and a low collector-emitter saturation voltage of -300mV. Offers a DC current gain (hFE) range of 140-280 and a transition frequency of 150MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 500mW. Packaged on a 1000-piece tape and reel, this RoHS compliant component is lead-free.
Frequency150MHz
PackageTO-243AA
PolarityPNP
Power500mW
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Technical Specifications
Onsemi 2SB1123S-TD-E technical specifications.
General
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 700mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | -6V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| Height | 1.5mm |
| Lead Free | Lead Free |
| Length | 4.5mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 2A |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Width | 2.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2SB1123S-TD-E Datasheet
Download the complete datasheet for Onsemi 2SB1123S-TD-E to view detailed technical specifications.
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