PNP Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 100V collector-emitter voltage, 4A maximum DC collector current, and 1000mW maximum power dissipation. This single-element silicon transistor offers a minimum DC current gain of 140 at 0.5A and 5V, with a typical transition frequency of 180MHz. Packaged in a 3-pin (3+Tab) plastic TP case with a pin pitch of 2.3mm, it operates within a temperature range of -55°C to 150°C.
PackageTP
MountingThrough Hole
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Technical Specifications
Onsemi 2SB1216S-H technical specifications.
General
| Package/Case | TP |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 2.3 |
| Package Height (mm) | 5.5 |
| Seated Plane Height (mm) | 8.6 |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 120V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 100V |
| Maximum DC Collector Current | 4A |
| Maximum Power Dissipation | 1000mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@5V |
| Maximum Transition Frequency | 180(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi 2SB1216S-H Datasheet
Download the complete datasheet for Onsemi 2SB1216S-H to view detailed technical specifications.
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