PNP Bipolar Junction Transistor (BJT) for through-hole mounting, featuring a 100V collector-emitter voltage and 4A continuous collector current. This single-element silicon transistor offers a maximum power dissipation of 1000mW and a minimum DC current gain of 200 at 0.5A and 5V. It operates within a temperature range of -55°C to 150°C and is housed in a 3-pin plastic package with a tab, measuring 6.5mm in length, 2.3mm in width, and 5.5mm in height.
PackageTP
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi 2SB1216T-H technical specifications.
General
| Package/Case | TP |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 2.3 |
| Package Height (mm) | 5.5 |
| Seated Plane Height (mm) | 8.6 |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 120V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 100V |
| Maximum DC Collector Current | 4A |
| Maximum Power Dissipation | 1000mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@5V |
| Maximum Transition Frequency | 180(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi 2SB1216T-H Datasheet
Download the complete datasheet for Onsemi 2SB1216T-H to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.