NPN Bipolar Junction Transistor (BJT) with a 160V collector-emitter breakdown voltage and 700mA maximum collector current. Features low VCE(sat) of 120mV and a gain bandwidth product of 120MHz. Packaged in a TO-243AA (SOT-89) surface-mount package, supplied on a 1000-piece tape and reel. Operates from -55°C to 150°C and is RoHS compliant.
Frequency120MHz
PackageTO-243AA
PolarityNPN
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Technical Specifications
Onsemi 2SC3648T-TD-E technical specifications.
General
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 120mV |
| Collector-emitter Voltage-Max | 400mV |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 120MHz |
| Height | 1.5mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 4.5mm |
| Max Breakdown Voltage | 160V |
| Max Collector Current | 700mA |
| Max Frequency | 120MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 120MHz |
| Width | 2.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2SC3648T-TD-E Datasheet
Download the complete datasheet for Onsemi 2SC3648T-TD-E to view detailed technical specifications.
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