
NPN bipolar junction transistor (BJT) with a 160V collector-emitter breakdown voltage and a maximum collector current of 1.5A. Features low VCE(sat) of -200mV and a transition frequency of 120MHz. hFE ranges from 100 to 400, with a maximum power dissipation of 1W. Packaged in SC with dimensions of 6.9mm (L) x 2.5mm (W) x 4.5mm (H), supplied on 2500-piece reels. RoHS compliant and lead-free.
Onsemi 2SC4614T-AN technical specifications.
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | -200mV |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector-emitter Voltage-Max | 450mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 120MHz |
| Gain Bandwidth Product | 120MHz |
| Height | 4.5mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 6.9mm |
| Max Collector Current | 1.5A |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Box |
| Polarity | NPN |
| Power Dissipation | 1W |
| RoHS Compliant | Yes |
| Series | 2SC4614 |
| Transition Frequency | 120MHz |
| Width | 2.5mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2SC4614T-AN to view detailed technical specifications.
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