NPN Epitaxial Silicon Transistor, designed for through-hole mounting in a TO-264 package. Features a maximum collector current of 17A and a maximum power dissipation of 150W. Offers a collector-emitter breakdown voltage of 250V and a transition frequency of 30MHz. This RoHS compliant component operates within a temperature range of -50°C to 150°C.
Frequency30MHz
PackageTO-264
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi 2SC5200RTU technical specifications.
General
| Package/Case | TO-264 |
| Collector Base Voltage (VCBO) | 250V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Voltage (VCEO) | 250V |
| Collector-emitter Voltage-Max | 3V |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 30MHz |
| Gain Bandwidth Product | 30MHz |
| hFE Min | 55 |
| Lead Free | Lead Free |
| Max Collector Current | 17A |
| Max Frequency | 30MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 30MHz |
| Weight | 6.756g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2SC5200RTU Datasheet
Download the complete datasheet for Onsemi 2SC5200RTU to view detailed technical specifications.
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