NPN Epitaxial Silicon Transistor, designed for through-hole mounting in a TO-264 package. Features a maximum collector current of 17A and a maximum power dissipation of 150W. Offers a collector-emitter breakdown voltage of 250V and a transition frequency of 30MHz. This RoHS compliant component operates within a temperature range of -50°C to 150°C.
Frequency30MHz
PackageTO-264
MountingThrough Hole
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi 2SC5200RTU technical specifications.
General
Package/Case
TO-264
Collector Base Voltage (VCBO)
250V
Collector Emitter Breakdown Voltage
250V
Collector Emitter Voltage (VCEO)
250V
Collector-emitter Voltage-Max
3V
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Frequency
30MHz
Gain Bandwidth Product
30MHz
hFE Min
55
Lead Free
Lead Free
Max Collector Current
17A
Max Frequency
30MHz
Max Operating Temperature
150°C
Min Operating Temperature
-50°C
Max Power Dissipation
150W
Mount
Through Hole
Number of Elements
1
Package Quantity
25
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
150W
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
30MHz
Weight
6.756g
Compliance
RoHS
Compliant
Datasheet
Onsemi 2SC5200RTU Datasheet
Download the complete datasheet for Onsemi 2SC5200RTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.