NPN RF Transistor, SOT-323 package, featuring a 7 GHz transition frequency and 10V collector-emitter breakdown voltage. This single-element transistor offers a maximum collector current of 70 mA and a gain of 12 dB. Operating across a temperature range of -55°C to 150°C, it boasts 150 mW power dissipation and is supplied on a 3000-piece tape and reel. This RoHS compliant component is designed for RF applications.
Frequency7GHz
PackageSOT-323
PolarityNPN
Power150mW
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Technical Specifications
Onsemi 2SC5226A-5-TL-E technical specifications.
General
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 10V |
| Collector Emitter Voltage (VCEO) | 10V |
| Collector-emitter Voltage-Max | 10V |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 7GHz |
| Gain | 12dB |
| Gain Bandwidth Product | 7GHz |
| Height | 0.9mm |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 10V |
| Max Collector Current | 70mA |
| Max Frequency | 7GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 7GHz |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2SC5226A-5-TL-E Datasheet
Download the complete datasheet for Onsemi 2SC5226A-5-TL-E to view detailed technical specifications.
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