Onsemi
2SC5415AE-TD-E
RF Transistor, NPN Single, 12 V, 100 mA, fT = 6.7 GHz, SOT-89 / PCP-1, 1000-REEL
Frequency8GHz
PackageTO-243AA
PolarityNPN
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Technical Specifications
Onsemi 2SC5415AE-TD-E technical specifications.
General
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector-emitter Voltage-Max | 12V |
| Emitter Base Voltage (VEBO) | 2V |
| Gain | 9dB |
| Gain Bandwidth Product | 6.7GHz |
| Height | 1.5mm |
| hFE Min | 90 |
| Lead Free | Lead Free |
| Length | 4.5mm |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 100mA |
| Max Frequency | 8GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 6.7GHz |
| Width | 2.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2SC5415AE-TD-E Datasheet
Download the complete datasheet for Onsemi 2SC5415AE-TD-E to view detailed technical specifications.
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