NPN bipolar junction transistor (BJT) in a SOT-89 package, offering a 50V collector-emitter breakdown voltage and a maximum collector current of 4A. This single-element transistor features a low collector-emitter saturation voltage of 225mV and a transition frequency of 400MHz. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.3W. The component is lead-free, RoHS compliant, and supplied on a 1000-piece tape and reel.
Frequency400MHz
PackageTO-243AA
PolarityNPN
Power1.3W
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Technical Specifications
Onsemi 2SC5566-TD-E technical specifications.
General
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 85V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 225mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 400MHz |
| Gain Bandwidth Product | 400MHz |
| Height | 1.5mm |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Length | 4.5mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 4A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 400MHz |
| Width | 2.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2SC5566-TD-E Datasheet
Download the complete datasheet for Onsemi 2SC5566-TD-E to view detailed technical specifications.
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