NPN Bipolar Junction Transistor (BJT) in a TO-251 package, designed for high-frequency applications with a transition frequency of 400MHz. Features a collector-emitter breakdown voltage of 50V and a maximum collector current of 1µA. Offers a low collector-emitter saturation voltage of 160mV, with a maximum power dissipation of 800mW. This RoHS compliant component operates within a temperature range of -55°C to 150°C.
Frequency400MHz
PackageTO-251
PolarityNPN
Power800mW
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Technical Specifications
Onsemi 2SC5706-H technical specifications.
General
| Package/Case | TO-251 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 160mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 240mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 400MHz |
| Gain Bandwidth Product | 400MHz |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 1uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 800mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 400MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2SC5706-H Datasheet
Download the complete datasheet for Onsemi 2SC5706-H to view detailed technical specifications.
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