NPN Bipolar Junction Transistor (BJT) in a TO-251 package, designed for high current applications with a maximum collector current of 8A and a collector-emitter breakdown voltage of 50V. Features a low collector-emitter saturation voltage of 110mV and a transition frequency of 330MHz. This RoHS compliant component offers a minimum hFE of 200 and operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1W.
Frequency330MHz
PackageTO-251
PolarityNPN
Power1W
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Technical Specifications
Onsemi 2SC5707-E technical specifications.
General
| Package/Case | TO-251 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 110mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 240mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 330MHz |
| Gain Bandwidth Product | 330MHz |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 330MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2SC5707-E Datasheet
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