The 2SC6095-TD-E is a NPN bipolar junction transistor with a maximum collector-emitter voltage of 80V and a maximum collector current of 4A. It has a gain bandwidth product of 350MHz and a maximum frequency of 1MHz. The transistor is packaged in a lead-free TO-243 package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C.
Frequency1MHz
PolarityNPN
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Technical Specifications
Onsemi 2SC6095-TD-E technical specifications.
General
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Saturation Voltage | 100mV |
| Collector-emitter Voltage-Max | 80V |
| Emitter Base Voltage (VEBO) | 6.5V |
| Gain Bandwidth Product | 350MHz |
| Height | 1.5mm |
| hFE Min | 300 |
| Lead Free | Lead Free |
| Length | 4.5mm |
| Max Collector Current | 4A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.5W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Series | 2SC6095 |
| Width | 2.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2SC6095-TD-E Datasheet
Download the complete datasheet for Onsemi 2SC6095-TD-E to view detailed technical specifications.
No datasheet is available for this part.
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