The 2SC6096-TD-E is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 2A. It has a gain bandwidth product of 300MHz and a maximum power dissipation of 1.3W. The transistor is packaged in a TO-243AA case and is lead-free and RoHS compliant. It operates over a temperature range of -55°C to 150°C.
PackageTO-243AA
PolarityNPN
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Technical Specifications
Onsemi 2SC6096-TD-E technical specifications.
General
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 100mV |
| Collector Emitter Voltage (VCEO) | 150mV |
| Collector-emitter Voltage-Max | 150mV |
| Emitter Base Voltage (VEBO) | 6.5V |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 300 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2SC6096-TD-E Datasheet
Download the complete datasheet for Onsemi 2SC6096-TD-E to view detailed technical specifications.
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