NPN bipolar junction transistor in SOT-23-3 package, featuring a 15V collector-emitter breakdown voltage and 700mA maximum collector current. Offers a low 80mV collector-emitter saturation voltage and a transition frequency of 250MHz. This single-element transistor operates within a temperature range of -55°C to 125°C and has a maximum power dissipation of 200mW. Packaged on a 3000-piece tape and reel, it is lead-free and RoHS compliant.
Onsemi 2SD1048-6-TB-E technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Saturation Voltage | 80mV |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 80mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 250MHz |
| Height | 1.1mm |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 700mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| Width | 1.5mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2SD1048-6-TB-E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.