NPN Bipolar Junction Transistor (BJT) with a 15V Collector-Emitter Breakdown Voltage and 700mA Max Collector Current. Features a low 80mV Collector-Emitter Saturation Voltage and a 250MHz Transition Frequency. Housed in a compact SOT-89 / PCP-1 package with Tin, Matte contact plating. Operates across a wide temperature range from -55°C to 150°C, with 500mW Max Power Dissipation. This lead-free, RoHS compliant component is supplied on a 1000-piece tape and reel.
Onsemi 2SD1618T-TD-E technical specifications.
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Saturation Voltage | 80mV |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 80mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 250MHz |
| Height | 1.5mm |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Length | 4.5mm |
| Max Collector Current | 700mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | 2SD1618 |
| Transition Frequency | 250MHz |
| Width | 2.5mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2SD1618T-TD-E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
