NPN Bipolar Junction Transistor (BJT) with a 50V Collector-Emitter Breakdown Voltage and a maximum collector current of 2A. Features a low Collector-Emitter Saturation Voltage of 150mV and a transition frequency of 150MHz. This single-element transistor offers an hFE range of 200-400 and is housed in a TO-243AA (SOT-89) package, supplied on a 1000-piece tape and reel. It operates within a temperature range of -55°C to 150°C and has a power dissipation of 500mW.
Frequency150MHz
PackageTO-243AA
PolarityNPN
Power500mW
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Technical Specifications
Onsemi 2SD1623T-TD-E technical specifications.
General
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 150mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 400mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| Height | 1.5mm |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Length | 4.5mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 2A |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 500mW |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Width | 2.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2SD1623T-TD-E Datasheet
Download the complete datasheet for Onsemi 2SD1623T-TD-E to view detailed technical specifications.
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