NPN Bipolar Junction Transistor (BJT) for power applications. Features a 50V collector-emitter voltage, 5A continuous collector current, and 1000mW power dissipation. Housed in a TO-251 (IPAK) package with 3 through-hole pins and a tab. Operates across a -55°C to 150°C temperature range.
PackageIPAK
MountingThrough Hole
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Technical Specifications
Onsemi 2SD1803T-H technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-251
Package/Case
IPAK
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
6.5
Package Width (mm)
2.3
Package Height (mm)
5.5
Seated Plane Height (mm)
8.6
Pin Pitch (mm)
2.3
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-251
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
60V
Maximum Emitter Base Voltage
6V
Maximum Collector-Emitter Voltage
50V
Maximum DC Collector Current
5A
Maximum Power Dissipation
1000mW
Material
Si
Minimum DC Current Gain
Maximum Transition Frequency
180(Typ)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
5V1P1
EU RoHS
Yes with Exemption
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi 2SD1803T-H Datasheet
Download the complete datasheet for Onsemi 2SD1803T-H to view detailed technical specifications.
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