
NPN Bipolar Junction Transistor (BJT) in a DPAK package, featuring a 20V collector-emitter breakdown voltage and a maximum collector current of 5A. Offers a low collector-emitter saturation voltage of 1.5V and a minimum hFE of 280. Operates with a collector-base voltage of 60V and an emitter-base voltage of 6V. This lead-free, RoHS compliant component has a transition frequency of 120MHz and a maximum power dissipation of 1W, supplied in a 700-piece tape and reel.
Onsemi 2SD1805G-TL-E technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 500mV |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 120MHz |
| Height | 2.3mm |
| hFE Min | 280 |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 5A |
| Max Frequency | 120MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Package Quantity | 700 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 120MHz |
| Width | 5.5mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2SD1805G-TL-E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
