NPN bipolar junction transistor (BJT) for through-hole mounting. Features a 100V collector-emitter voltage, 4A maximum DC collector current, and 1000mW maximum power dissipation. This single-element silicon transistor offers a minimum DC current gain of 200 at 0.5A and 5V, with a typical transition frequency of 180MHz. Housed in a 3-pin plastic TP package with a tab, measuring 6.5mm x 2.3mm x 5.5mm. Operates within a temperature range of -55°C to 150°C.
PackageTP
MountingThrough Hole
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Technical Specifications
Onsemi 2SD1816T-H technical specifications.
General
Package/Case
TP
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
6.5
Package Width (mm)
2.3
Package Height (mm)
5.5
Seated Plane Height (mm)
8.6
Pin Pitch (mm)
2.3
Package Material
Plastic
Mounting
Through Hole
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
120V
Maximum Emitter Base Voltage
6V
Maximum Collector-Emitter Voltage
100V
Maximum DC Collector Current
4A
Maximum Power Dissipation
1000mW
Material
Si
Minimum DC Current Gain
Maximum Transition Frequency
180(Typ)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
5V1P1
EU RoHS
Yes with Exemption
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi 2SD1816T-H Datasheet
Download the complete datasheet for Onsemi 2SD1816T-H to view detailed technical specifications.
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