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Technical Specifications
Onsemi 2SJ656 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 58mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 125ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Packaging | Bulk |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 75.5mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 340ns |
| Turn-On Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2SJ656 Datasheet
Download the complete datasheet for Onsemi 2SJ656 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.