The 2SK1069-5-TL-E is a single N-channel junction field-effect transistor from Onsemi. It features a maximum drain source voltage of 40V and a maximum continuous drain current of 20A. The device can withstand a maximum power dissipation of 150W and operates within a temperature range of -55°C to 150°C. The 2SK1069-5-TL-E is fabricated using silicon material and has a maximum drain gate voltage of -40V.
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Technical Specifications
Onsemi 2SK1069-5-TL-E technical specifications.
General
| Channel Type | N |
| Configuration | Single |
| Maximum Drain Source Voltage | 40V |
| Maximum Continuous Drain Current | 20mA |
| Maximum Drain Gate Voltage | -40V |
| Material | Si |
| Maximum Power Dissipation | 150mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| RoHS | Yes |
| RoHS Version | 2011/65/EU, 2015/863 |
Datasheet
Onsemi 2SK1069-5-TL-E Datasheet
Download the complete datasheet for Onsemi 2SK1069-5-TL-E to view detailed technical specifications.
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