N-channel enhancement mode power MOSFET featuring a 1500V drain-source voltage and 2A continuous drain current. This single-element transistor is housed in a TO-3PF plastic package with through-hole mounting. Key specifications include a maximum gate-source voltage of ±20V, a typical gate charge of 37.5nC at 10V, and an input capacitance of 380pF at 30V. The component offers a maximum power dissipation of 3000mW and operates within a temperature range of -55°C to 150°C.
PackageTO-3PF
MountingThrough Hole
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Technical Specifications
Onsemi 2SK3747-1E technical specifications.
General
| Package/Case | TO-3PF |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 26.5 |
| Seated Plane Height (mm) | 29.5 |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 1500V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 2A |
| Maximum Drain Source Resistance | 13000@10VmOhm |
| Typical Gate Charge @ Vgs | 37.5@10VnC |
| Typical Gate Charge @ 10V | 37.5nC |
| Typical Input Capacitance @ Vds | 380@30VpF |
| Maximum Power Dissipation | 3000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi 2SK3747-1E Datasheet
Download the complete datasheet for Onsemi 2SK3747-1E to view detailed technical specifications.
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