N-channel enhancement mode silicon power MOSFET designed for through-hole mounting. Features a 500V drain-source voltage, 26A continuous drain current, and low 240mOhm drain-source resistance at 10V. Housed in a TO-3PB package with 3 pins and a tab, offering a maximum power dissipation of 2500mW. Operates across a wide temperature range from -55°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi 2SK4221 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-3PB |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.6 |
| Package Width (mm) | 4.8 |
| Package Height (mm) | 16.5 |
| Pin Pitch (mm) | 5.45 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 26A |
| Material | Si |
| Maximum Drain Source Resistance | 240@10VmOhm |
| Typical Gate Charge @ Vgs | 87@10VnC |
| Typical Gate Charge @ 10V | 87nC |
| Typical Input Capacitance @ Vds | 2250@30VpF |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Onsemi 2SK4221 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
