N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 23A continuous drain current. This single-element silicon transistor is housed in a TO-3PB package with through-hole mounting and a 3-pin configuration, including a tab. Key specifications include a maximum gate-source voltage of ±30V, a drain-source on-resistance of 340mΩ at 10V, and a maximum power dissipation of 2500mW. Operating temperature range is -55°C to 150°C.
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| Package/Case | TO-3PB |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.6 |
| Package Width (mm) | 4.8 |
| Package Height (mm) | 16.5 |
| Pin Pitch (mm) | 5.45 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 23A |
| Material | Si |
| Maximum Drain Source Resistance | 340@10VmOhm |
| Typical Gate Charge @ Vgs | 81@10VnC |
| Typical Gate Charge @ 10V | 81nC |
| Typical Input Capacitance @ Vds | 2250@30VpF |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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