NPN RF BJT transistor with a 10V collector-emitter breakdown voltage and 70mA maximum collector current. Features a 4.5GHz gain bandwidth product and 5.5GHz operating frequency, with a minimum hFE of 100. Packaged in a 3-pin SC-59 (TO-236-3) with tape and reel packaging. Operates from -25°C to 150°C with 200mW maximum power dissipation.
Frequency5.5GHz
PackageTO-236-3
PolarityNPN
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Technical Specifications
Onsemi 55GN01CA-TB-E technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 10V |
| Collector-emitter Voltage-Max | 10V |
| Continuous Collector Current | 5mA |
| Emitter Base Voltage (VEBO) | 3V |
| Gain | 9.5dB |
| Gain Bandwidth Product | 4.5GHz |
| Height | 1.1mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 10V |
| Max Collector Current | 70mA |
| Max Frequency | 5.5GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | 25°C |
| Max Power Dissipation | 200mW |
| Operating Frequency | 5.5 GHz |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 4.5GHz |
| Width | 1.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 55GN01CA-TB-E Datasheet
Download the complete datasheet for Onsemi 55GN01CA-TB-E to view detailed technical specifications.
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