The 5LN01SP is an N-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 250mW and a continuous drain current of 100mA. The device is packaged in a SC package and is lead-free. It has a drain to source breakdown voltage of 50V and a drain to source resistance of 10R. The 5LN01SP is RoHS compliant and suitable for use in a variety of applications.
PackageSC
PolarityN-CHANNEL
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Technical Specifications
Onsemi 5LN01SP technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 10R |
| Drain to Source Voltage (Vdss) | 50V |
| Element Configuration | Single |
| Fall Time | 105ns |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 6.6pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Rds On Max | 7.8R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 190ns |
| Turn-On Delay Time | 18ns |
| Weight | 0.016oz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 5LN01SP Datasheet
Download the complete datasheet for Onsemi 5LN01SP to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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