The BASH19LT1G is a SILICON rectifier diode with a maximum operating temperature of 175 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It has a maximum power dissipation of 0.3 watts and a breakdown voltage of 120 volts. The diode is packaged in a 3-pin TO-236 package and is suitable for general purpose rectification applications.
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Technical Specifications
Onsemi BASH19LT1G technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 120 |
| Breakdown Voltage-Min | 120 |
| Power Dissipation-Max | 0.3 |
Compliance
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Onsemi BASH19LT1G Datasheet
Download the complete datasheet for Onsemi BASH19LT1G to view detailed technical specifications.
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