
NPN bipolar junction transistor (BJT) in a TO-92-3 package for through-hole mounting. Features a maximum collector-emitter voltage of 50V (DC rated voltage) and a continuous collector current of 100mA. Offers a minimum DC current gain (hFE) of 120 and a gain bandwidth product of 200MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW. This lead-free, RoHS-compliant component is supplied in bulk packaging.
Onsemi BC182 technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector-emitter Voltage-Max | 50V |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 200MHz |
| Height | 5.33mm |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Weight | 0.2g |
| Width | 4.19mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC182 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
