PNP Bipolar Junction Transistor (BJT) in a TO-92 package, featuring a 50V collector-emitter voltage (VCEO) and a maximum collector current of 100mA. This through-hole component offers a minimum DC current gain (hFE) of 40 and a transition frequency of 280MHz. With a maximum power dissipation of 350mW, it operates across a wide temperature range from -55°C to 150°C. The device is lead-free and RoHS compliant.
PackageTO-92-3
Current Rating-100mA
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi BC212B technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
-60V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
600mV
Current Rating
-100mA
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
280MHz
hFE Min
40
Lead Free
Lead Free
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Through Hole
Number of Elements
1
Package Quantity
5000
Packaging
Bulk
Polarity
PNP
Power Dissipation
350mW
RoHS Compliant
Yes
Transition Frequency
280MHz
DC Rated Voltage
-50V
Compliance
RoHS
Compliant
Datasheet
Onsemi BC212B Datasheet
Download the complete datasheet for Onsemi BC212B to view detailed technical specifications.
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