PNP Bipolar Junction Transistor (BJT) in a TO-92 package, featuring a 50V collector-emitter voltage (VCEO) and a maximum collector current of 100mA. This through-hole component offers a minimum DC current gain (hFE) of 40 and a transition frequency of 280MHz. With a maximum power dissipation of 350mW, it operates across a wide temperature range from -55°C to 150°C. The device is lead-free and RoHS compliant.
PackageTO-92-3
Current Rating-100mA
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi BC212B technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 280MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 350mW |
| RoHS Compliant | Yes |
| Transition Frequency | 280MHz |
| DC Rated Voltage | -50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC212B Datasheet
Download the complete datasheet for Onsemi BC212B to view detailed technical specifications.
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