PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage and a maximum collector current of 300mA. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 625mW. This through-hole component is housed in a TO-92 package and offers a transition frequency of 200MHz. RoHS compliant and lead-free.
Frequency200MHz
PackageTO-92
Current Rating-300mA
MountingThrough Hole
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Technical Specifications
Onsemi BC212L technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | -300mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 300mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC212L Datasheet
Download the complete datasheet for Onsemi BC212L to view detailed technical specifications.
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