PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage and a maximum collector current of 300mA. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 625mW. This through-hole component is housed in a TO-92 package and offers a transition frequency of 200MHz. RoHS compliant and lead-free.
Frequency200MHz
PackageTO-92
Current Rating-300mA
MountingThrough Hole
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Technical Specifications
Onsemi BC212L technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
-60V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
600mV
Current Rating
-300mA
Emitter Base Voltage (VEBO)
5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
hFE Min
60
Lead Free
Lead Free
Max Collector Current
300mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Bulk
Polarity
PNP
Power Dissipation
625mW
RoHS Compliant
Yes
Transition Frequency
200MHz
DC Rated Voltage
-50V
Compliance
RoHS
Compliant
Datasheet
Onsemi BC212L Datasheet
Download the complete datasheet for Onsemi BC212L to view detailed technical specifications.
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