
PNP Bipolar Junction Transistor (BJT) in a TO-92-3 package for through-hole mounting. Features a 50V Collector-Emitter Voltage (VCEO) and a 100mA Continuous Collector Current. Offers a minimum DC current gain (hFE) of 60. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW. This RoHS compliant component is supplied on tape and reel.
Onsemi BC212LB_D74Z technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 600mV |
| Continuous Collector Current | 100mA |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC212LB_D74Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
