PNP Bipolar Junction Transistor (BJT) in a TO-92 package for through-hole mounting. Features a maximum collector current of 500mA and a collector-emitter breakdown voltage of 30V. Offers a transition frequency of 200MHz and a minimum DC current gain (hFE) of 80. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 625mW. This RoHS compliant component is supplied in bulk packaging.
Frequency200MHz
PackageTO-92
Current Rating-500mA
MountingThrough Hole
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Technical Specifications
Onsemi BC213L technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
45V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
600mV
Current Rating
-500mA
Emitter Base Voltage (VEBO)
-5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
hFE Min
80
Lead Free
Lead Free
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Bulk
Polarity
PNP
Power Dissipation
625mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
200MHz
DC Rated Voltage
-30V
Compliance
RoHS
Compliant
Datasheet
Onsemi BC213L Datasheet
Download the complete datasheet for Onsemi BC213L to view detailed technical specifications.
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