PNP Bipolar Junction Transistor (BJT) in a TO-92 package for through-hole mounting. Features a collector-emitter breakdown voltage of 30V, a maximum collector current of 500mA, and a transition frequency of 200MHz. Offers a minimum DC current gain (hFE) of 140 and a maximum power dissipation of 625mW. Operates across a temperature range of -55°C to 150°C, is lead-free, and RoHS compliant.
Frequency200MHz
PackageTO-92
Current Rating-500mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi BC214L technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -45V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 140 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC214L Datasheet
Download the complete datasheet for Onsemi BC214L to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
