
PNP Bipolar Junction Transistor (BJT) in a TO-92-3 package. Features a 30V Collector-Emitter Voltage (VCEO) and a 30V DC Rated Voltage. Offers a continuous collector current of -500mA and a maximum power dissipation of 625mW. Exhibits a minimum hFE of 140 and a transition frequency of 200MHz. Designed for through-hole mounting and is RoHS compliant.
Onsemi BC214L_D26Z technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 600mV |
| Continuous Collector Current | -500mA |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 140 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -30V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC214L_D26Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
