PNP Bipolar Junction Transistor (BJT) in a TO-92-3 package. Features a 30V Collector-Emitter Voltage (VCEO) and a 30V DC Rated Voltage. Offers a continuous collector current of -500mA and a maximum power dissipation of 625mW. Exhibits a minimum hFE of 140 and a transition frequency of 200MHz. Designed for through-hole mounting and is RoHS compliant.
Frequency200MHz
PackageTO-92-3
Current Rating-500mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi BC214L_D26Z technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
45V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
-30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
600mV
Continuous Collector Current
-500mA
Current Rating
-500mA
Emitter Base Voltage (VEBO)
-5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
hFE Min
140
Lead Free
Lead Free
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
625mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
200MHz
DC Rated Voltage
-30V
Compliance
RoHS
Compliant
Datasheet
Onsemi BC214L_D26Z Datasheet
Download the complete datasheet for Onsemi BC214L_D26Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
