PNP Bipolar Junction Transistor (BJT) in a TO-92 package for through-hole mounting. Features a 30V collector-emitter voltage (VCEO) and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 200MHz. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 625mW. This RoHS compliant component is lead-free.
Frequency200MHz
PackageTO-92
Current Rating-500mA
MountingThrough Hole
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Technical Specifications
Onsemi BC214LB technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
-45V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
600mV
Current Rating
-500mA
Emitter Base Voltage (VEBO)
-5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
hFE Min
200
Lead Free
Lead Free
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Bulk
Polarity
PNP
Power Dissipation
625mW
RoHS Compliant
Yes
Transition Frequency
200MHz
DC Rated Voltage
-30V
Compliance
RoHS
Compliant
Datasheet
Onsemi BC214LB Datasheet
Download the complete datasheet for Onsemi BC214LB to view detailed technical specifications.
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