NPN bipolar junction transistor designed for small signal amplification. Features a 45V collector-emitter breakdown voltage and a 100mA maximum collector current. Operates with a 250MHz transition frequency and offers a minimum DC current gain (hFE) of 120. Housed in a TO-92 package for through-hole mounting, with a maximum power dissipation of 500mW. Suitable for operation across a wide temperature range from -55°C to 150°C.
Frequency250MHz
PackageTO-92
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC237A technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 45V |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Onsemi BC237A Datasheet
Download the complete datasheet for Onsemi BC237A to view detailed technical specifications.
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