NPN bipolar junction transistor (BJT) in a TO-92-3 package, designed for through-hole mounting. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 45V. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 250MHz. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 500mW. This RoHS compliant component is supplied in an ammo pack.
Frequency250MHz
PackageTO-92-3
Current Rating100mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi BC237BTAR technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
600mV
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Frequency
250MHz
Gain Bandwidth Product
250MHz
hFE Min
120
Lead Free
Lead Free
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
250MHz
DC Rated Voltage
45V
Compliance
RoHS
Compliant
Datasheet
Onsemi BC237BTAR Datasheet
Download the complete datasheet for Onsemi BC237BTAR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
