
PNP bipolar junction transistor in a TO-92 package, designed for through-hole mounting. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 45V. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 130MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 500mW. This RoHS compliant component is lead-free and supplied in bulk packaging.
Onsemi BC307BBU technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -5V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | -100mA |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 130MHz |
| Gain Bandwidth Product | 130MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 500mW |
| RoHS Compliant | Yes |
| Transition Frequency | 130MHz |
| DC Rated Voltage | -45V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC307BBU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
