PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a collector-emitter voltage (VCEO) of 45V and a maximum collector current of 100mA. Offers a gain bandwidth product (hFE) of 200 at a transition frequency of 280MHz. Operates across a temperature range of -55°C to 150°C with a power dissipation of 350mW. Through-hole mount, lead-free, and RoHS compliant.
Onsemi BC307BRL1G technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 250mV |
| Contact Plating | Copper, Tin, Silver |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 280MHz |
| Gain Bandwidth Product | 280MHz |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Frequency | 280MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 280MHz |
| DC Rated Voltage | -45V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC307BRL1G to view detailed technical specifications.
No datasheet is available for this part.
