PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 25V collector-emitter breakdown voltage and a maximum collector current of 100mA. Operates with a transition frequency of 130MHz and a minimum hFE of 120. Packaged in a TO-92 through-hole mount, this lead-free and RoHS compliant component offers a power dissipation of 500mW and an operating temperature range of -55°C to 150°C.
Frequency130MHz
PackageTO-92
Current Rating-100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC308 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
-5V
Collector Emitter Breakdown Voltage
25V
Collector Emitter Voltage (VCEO)
25V
Collector-emitter Voltage-Max
500mV
Current Rating
-100mA
Emitter Base Voltage (VEBO)
-5V
Frequency
130MHz
Gain Bandwidth Product
130MHz
hFE Min
120
Lead Free
Lead Free
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Bulk
Polarity
PNP
Power Dissipation
500mW
RoHS Compliant
Yes
Series
BC308
Transition Frequency
130MHz
DC Rated Voltage
-25V
Compliance
RoHS
Compliant
Datasheet
Onsemi BC308 Datasheet
Download the complete datasheet for Onsemi BC308 to view detailed technical specifications.
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