
PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 25V collector-emitter breakdown voltage and a maximum collector current of 100mA. Operates with a transition frequency of 130MHz and a minimum hFE of 120. Packaged in a TO-92 through-hole mount, this lead-free and RoHS compliant component offers a power dissipation of 500mW and an operating temperature range of -55°C to 150°C.
Onsemi BC308 technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -5V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 130MHz |
| Gain Bandwidth Product | 130MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 500mW |
| RoHS Compliant | Yes |
| Series | BC308 |
| Transition Frequency | 130MHz |
| DC Rated Voltage | -25V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC308 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
