PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 25V collector-emitter breakdown voltage and a 130MHz transition frequency. This TO-92 packaged transistor offers a minimum DC current gain (hFE) of 120 and a maximum collector current of 100mA. Designed for through-hole mounting, it operates within a temperature range of -55°C to 150°C with a 500mW power dissipation.
Frequency130MHz
PackageTO-92
Current Rating-100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC308C technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -5V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 130MHz |
| Gain Bandwidth Product | 130MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 500mW |
| RoHS Compliant | No |
| Series | BC308 |
| Transition Frequency | 130MHz |
| DC Rated Voltage | -25V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BC308C Datasheet
Download the complete datasheet for Onsemi BC308C to view detailed technical specifications.
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